高增益混合石墨烯-有机半导体光电晶体管。

High gain hybrid graphene-organic semiconductor phototransistors.

作者信息

Huisman Everardus H, Shulga Artem G, Zomer Paul J, Tombros Nikolaos, Bartesaghi Davide, Bisri Satria Zulkarnaen, Loi Maria A, Koster L Jan Anton, van Wees Bart J

机构信息

†Zernike Institute for Advanced Materials, University of Gronigen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.

‡Stichting Fundamenteel Onderzoek der Materie, P.O. Box 3021, 3502 GA Utrecht, The Netherlands.

出版信息

ACS Appl Mater Interfaces. 2015 Jun 3;7(21):11083-8. doi: 10.1021/acsami.5b00610. Epub 2015 May 20.

DOI:10.1021/acsami.5b00610

PMID:25961150

Abstract

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create large-area graphene transistors made out of graphene grown by chemical vapor deposition. Low transit time devices are fabricated out of mechanically exfoliated graphene on top of mechanically exfoliated hexagonal boron nitride using standard e-beam lithography. Responsivities exceeding 10(5) A/W are obtained for the low transit time devices.

摘要

介绍了石墨烯与有机半导体聚（3 - 己基噻吩 - 2,5 - 二亚基）（P3HT）的混合光电晶体管。展示了两种类型的光电晶体管，其电荷载流子渡越时间相差超过6个数量级。高渡越时间器件采用无光刻胶工艺制造，以制备由化学气相沉积生长的石墨烯制成的大面积石墨烯晶体管。低渡越时间器件是在机械剥离的六方氮化硼上使用标准电子束光刻技术，由机械剥离的石墨烯制成。低渡越时间器件的响应度超过10⁵ A/W。