Kim Sung-Hun, Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, Korea.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1875-1882. doi: 10.1166/jnn.2021.18902.
Herein, indium-tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol-gel ITO films are compared with those of as-spun ITO films and sol-gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol-gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.
在此，通过基于溶液的旋涂工艺制备铟锡氧化物（ITO）薄膜，随后进行微波辐照（MWI）热处理工艺。研究了薄膜的结构、电学和光学性质。将微波辐照的溶胶 - 凝胶ITO薄膜的性质与旋涂ITO薄膜以及经过传统炉退火（CFA）或快速热工艺（RTP）的溶胶 - 凝胶ITO薄膜的性质进行比较。微波辐照后，发现溶胶 - 凝胶ITO薄膜已经结晶，并且它们显示出增强的导电性和透明度。此外，在微波功率水平增加时，ITO薄膜的电阻显著降低，并且即使在500 W的低微波功率下，薄膜的电阻率几乎饱和。微波辐照样品物理性质的改善主要归因于ITO薄膜电子浓度的增加以及微波辐照后载流子迁移率的增加。
