Pushp Aakash, Phung Timothy, Rettner Charles, Hughes Brian P, Yang See-Hun, Parkin Stuart S P
IBM Almaden Research Center, San Jose, CA 95120;
IBM Almaden Research Center, San Jose, CA 95120; Department of Electrical Engineering, Stanford University, Stanford, CA 94305; and.
Proc Natl Acad Sci U S A. 2015 May 26;112(21):6585-90. doi: 10.1073/pnas.1507084112. Epub 2015 May 13.
Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.
自旋极化电荷电流借助自旋转移力矩(STT)来诱导磁隧道结(MTJ)切换。最近,利用磁性材料的自旋相关热电特性,人们提出了从温度梯度产生自旋电流的新方法及其相关的热自旋力矩(TST),但到目前为止,这些TST还不够大,不足以影响MTJ切换。在此,我们通过在超薄MgO隧道势垒上产生大幅影响MTJ切换场的大温度梯度,在MTJ中展示了显著的TST。我们将TST的起源归因于MTJ零偏置电压下隧道电导的不对称性。值得注意的是,通过磁塞贝克电压测量,我们估计由于温度梯度产生的电荷电流会引起的STT比我们观察到的切换场变化所需的STT小一千倍。