Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Adv Mater. 2015 Jun 24;27(24):3681-6. doi: 10.1002/adma.201501350. Epub 2015 May 12.
Simultaneous increases in electrical conductivity (up to 200%) and thermopower (up to 70%) are demonstrated by introducing native defects in Bi2 Te3 films, leading to a high power factor of 3.4 × 10(-3) W m(-1) K(-2). The maximum enhancement of the power factor occurs when the native defects act beneficially both as electron donors and energy filters to mobile electrons. They also act as effective phonon scatterers.
通过在 Bi2 Te3 薄膜中引入本征缺陷，同时提高电导率（高达 200%）和塞贝克系数（高达 70%），实现了 3.4×10(-3) W m(-1) K(-2) 的高功率因子。当本征缺陷既作为电子施主又作为移动电子的能量过滤器对其产生有利作用时，功率因子会出现最大增强。它们还可以作为有效的声子散射体。
