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使用同心管化学气相沉积(CVD)反应器进行石墨烯的高速卷对卷制造。

High-speed roll-to-roll manufacturing of graphene using a concentric tube CVD reactor.

作者信息

Polsen Erik S, McNerny Daniel Q, Viswanath B, Pattinson Sebastian W, John Hart A

机构信息

Department of Mechanical Engineering, University of Michigan, 2350 Hayward St., Ann Arbor, MI 48109, USA.

Department of Mechanical Engineering and Laboratory for Manufacturing and Productivity, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA.

出版信息

Sci Rep. 2015 May 21;5:10257. doi: 10.1038/srep10257.

Abstract

We present the design of a concentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its application to continuous production of graphene on copper foil. In the CTCVD reactor, the thin foil substrate is helically wrapped around the inner tube, and translates through the gap between the concentric tubes. We use a bench-scale prototype machine to synthesize graphene on copper substrates at translation speeds varying from 25 mm/min to 500 mm/min, and investigate the influence of process parameters on the uniformity and coverage of graphene on a continuously moving foil. At lower speeds, high-quality monolayer graphene is formed; at higher speeds, rapid nucleation of small graphene domains is observed, yet coalescence is prevented by the limited residence time in the CTCVD system. We show that a smooth isothermal transition between the reducing and carbon-containing atmospheres, enabled by injection of the carbon feedstock via radial holes in the inner tube, is essential to high-quality roll-to-roll graphene CVD. We discuss how the foil quality and microstructure limit the uniformity of graphene over macroscopic dimensions. We conclude by discussing means of scaling and reconfiguring the CTCVD design based on general requirements for 2-D materials manufacturing.

摘要

我们展示了一种用于在柔性基板上进行卷对卷化学气相沉积(CVD)的同心管(CT)反应器的设计,以及其在铜箔上连续生产石墨烯的应用。在CT CVD反应器中,薄箔基板螺旋缠绕在内管上,并穿过同心管之间的间隙平移。我们使用一台台式规模的原型机,以25毫米/分钟至500毫米/分钟的平移速度在铜基板上合成石墨烯,并研究工艺参数对连续移动箔上石墨烯的均匀性和覆盖率的影响。在较低速度下,形成高质量的单层石墨烯;在较高速度下,观察到小石墨烯域的快速成核,但由于在CT CVD系统中的停留时间有限,合并受到阻碍。我们表明,通过在内管的径向孔中注入碳原料实现还原气氛和含碳气氛之间的平滑等温转变,对于高质量的卷对卷石墨烯CVD至关重要。我们讨论了箔的质量和微观结构如何限制宏观尺寸上石墨烯的均匀性。我们通过讨论基于二维材料制造的一般要求对CT CVD设计进行缩放和重新配置的方法来得出结论。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19bd/4440526/e9d41eac7091/srep10257-f2.jpg

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