Liao Jian, Ou Yunbo, Feng Xiao, Yang Shuo, Lin Chaojing, Yang Wenmin, Wu Kehui, He Ke, Ma Xucun, Xue Qi-Kun, Li Yongqing
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
Phys Rev Lett. 2015 May 29;114(21):216601. doi: 10.1103/PhysRevLett.114.216601. Epub 2015 May 28.
Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here, we report experimental demonstration of a crossover from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi_{1-x}Sb_{x}){2}Te{3} films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually, positive magnetoconductivity emerges when the electron system becomes strongly localized. This work reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.
安德森局域化,即在无序系统中不存在扩散输运,在众多电子系统中已表现为跳跃输运,而在最近发现的拓扑绝缘体中尚未直接观察到。在此,我们报告了用超薄(Bi₁₋ₓSbₓ)₂Te₃薄膜从弱反局域化 regime 中的扩散输运到安德森局域化 regime 中的变程跳跃输运的转变的实验演示。随着无序变得更强,由于弱反局域化导致的负磁导率逐渐被抑制,最终,当电子系统变得强局域化时出现正磁导率。这项工作揭示了无序在超薄拓扑绝缘体薄膜的量子输运性质中的关键作用,其中理论预测了与拓扑相变相关的丰富物理现象。