Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Nanoscale. 2015 Jul 21;7(27):11660-6. doi: 10.1039/c5nr02019k. Epub 2015 Jun 22.
Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.
基于纳米线的铁电互补金属氧化物半导体（NW FeCMOS）非易失性存储器件通过利用单个 n 型和 p 型 Si 纳米线铁电栅场效应晶体管（NW FeFET）作为单个存储单元成功制造。除了具有单个通道 n 型和 p 型 Si NW FeFET 存储器的优点外，Si NW FeCMOS 存储器件还表现出直接读出电压和超低功耗。该器件的读取状态功率消耗小于 0.1 pW，比单通道铁电存储器的导通状态功率消耗低 10(5)倍以上。这一结果表明，Si NW FeCMOS 存储器件非常适合用于现代便携式电子设备中的非易失性存储芯片，特别是在低功耗对于节能和长期使用至关重要的情况下。
