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铁电栅场效应晶体管的最新进展及其在非易失性逻辑和铁电与非闪存中的应用

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory.

作者信息

Sakai Shigeki, Takahashi Mitsue

机构信息

National Institute of Advanced Industrial Science and Technology / Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.

出版信息

Materials (Basel). 2010 Nov 18;3(11):4950-4964. doi: 10.3390/ma3114950.

DOI:10.3390/ma3114950
PMID:28883363
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5445777/
Abstract

We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi₂Ta₂O₉/(HfO₂)(Al₂O₃) (Hf-Al-O) and Pt/SrBi₂Ta₂O₉/HfO₂ gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 10⁶ after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 10⁵. A fabricated self-aligned gate Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.4 × 10⁵ after 33.5 day, which is 6.5 × 10⁴ after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage (V) distribution. The V can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.

摘要

我们研究了具有Pt/SrBi₂Ta₂O₉/(HfO₂)(Al₂O₃)（Hf-Al-O）和Pt/SrBi₂Ta₂O₉/HfO₂栅极堆叠的铁电栅场效应晶体管（FeFET）。所制备的FeFET具有优异的数据保持特性：一个FeFET的导通态与截止态之间的漏极电流比在12天后超过2×10⁶，且该比值的下降速率非常小，以至于外推10年后的漏极电流比大于1×10⁵。一个制备的自对准栅极Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si FET在33.5天后显示出足够大的漏极电流比为2.4×10⁵，外推10年后为6.5×10⁴。所开发的FeFET在高达120°C的高温下也显示出稳定的保持特性，并且晶体管阈值电压（V）分布较小。对于n沟道和p沟道FeFET，V可以通过控制沟道杂质密度来调节。这些性能现在适用于具有非易失性功能的集成电路应用。展示了其应用于铁电CMOS非易失性逻辑电路和铁电NAND闪存的基本特性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/e3961a130709/materials-03-04950-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/f79dc5d5b988/materials-03-04950-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/24059f7d66aa/materials-03-04950-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/4f536b483a6f/materials-03-04950-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/db26297555d7/materials-03-04950-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/e13cf64fad18/materials-03-04950-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/8bd1a0b1d1d9/materials-03-04950-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/e3961a130709/materials-03-04950-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/56df5d678c33/materials-03-04950-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/f99aa00b41b5/materials-03-04950-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/d594f297fbc7/materials-03-04950-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/78da25b192dd/materials-03-04950-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/66416243cb08/materials-03-04950-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/a2ce1968b45f/materials-03-04950-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/f79dc5d5b988/materials-03-04950-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/24059f7d66aa/materials-03-04950-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/4f536b483a6f/materials-03-04950-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/db26297555d7/materials-03-04950-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/e13cf64fad18/materials-03-04950-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/8bd1a0b1d1d9/materials-03-04950-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d50/5445777/e3961a130709/materials-03-04950-g013.jpg

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