Van Ngoc Huynh, Lee Jae-Hyun, Sohn Jung Inn, Cha Seungnam, Whang Dongmok, Kim Jong Min, Kang Dae Joon
Department of Physics, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Nanotechnology. 2014 May 23;25(20):205201. doi: 10.1088/0957-4484/25/20/205201. Epub 2014 Apr 30.
We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≤3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 10(5), a long retention time of over 3 × 10(4) s and a high endurance of over 10(5) programming cycles whilst maintaining an I ON/I OFF ratio higher than 10(3). This result may be promising for next-generation nonvolatile memory on flexible substrate applications.
我们通过低温制造工艺，成功制造出了基于铁电栅场效应晶体管（FEFET）的非易失性存储器件，该器件采用涂覆有ω形栅有机铁电聚偏二氟乙烯-三氟乙烯的n型硅纳米线。我们的FEFET存储器件通过调整掺杂浓度可实现阈值电压可控，具有出色的存储特性，超低导通态功耗（≤3 nW），开态和关态之间的沟道电导调制幅度大，超过10⁵，保留时间长，超过3×10⁴ s，耐久性高，超过10⁵次编程循环，同时保持开/关电流比高于10³。这一结果对于柔性衬底应用的下一代非易失性存储器可能具有广阔前景。
