高锡含量的Ge1-xSnx纳米线的微波辅助溶液-液相-固相生长
Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content.
作者信息
Barth Sven, Seifner Michael S, Bernardi Johannes
机构信息
Vienna University of Technology, Institute of Materials Chemistry, Getreidemarkt 9/BC/02, 1060 Vienna, Austria.
出版信息
Chem Commun (Camb). 2015 Aug 7;51(61):12282-5. doi: 10.1039/c5cc03639a.
PMID:26138315
Abstract
A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1-xSnx) nanowires with constant diameter along their axis was developed. Ge1-xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.
摘要
开发了一种微波辅助生长方法，用于首次自下而上合成沿其轴具有恒定直径的锗锡合金（Ge1-xSnx）纳米线。已合成平均直径为190±30nm且锗中锡均匀分布为12.4±0.7%的Ge1-xSnx纳米线。
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