单层二硫化铼（ReS2）的化学气相沉积。
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).
机构信息
Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA.
Department of Chemistry, Rice University, Houston, TX, 77005, USA.
出版信息
Adv Mater. 2015 Aug 19;27(31):4640-8. doi: 10.1002/adma.201501795. Epub 2015 Jul 3.
PMID:26140355
Abstract
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
摘要
本文报道了在 450°C 的低温下通过化学气相沉积法直接合成单层和多层 ReS2 的方法。使用各种光谱和显微镜方法对这种材料进行了详细的表征。此外，还评估了其初始场效应晶体管特性，这突出了其作为 n 型半导体的应用潜力。
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