Wu Di, Chen Zhao, Zhang Yufeng, Zhang Jing, Liu Sheng Hua, Yin Jun
Key Laboratory of Pesticide and Chemical Biology, Ministry of Education, College of Chemistry, Central China Normal University, Wuhan 430079, P.R. China.
J Org Chem. 2015 Aug 21;80(16):8443-8. doi: 10.1021/acs.joc.5b01341. Epub 2015 Jul 30.
Dinaphthothiophene has been reported as a promising p-type semiconductor. The development of high-performance n-type semiconductors is highly desirable. The introduction of an imide group into polycyclic aromatic hydrocarbons can lower their LUMO levels to meet the basic requirement of n-type organic semiconductor materials. In this work, we have synthesized four imide-modified dinaphthothiophenes and dinaphthothiophenedioxides. Their optoelectronic properties have been investigated. Their low-lying LUMO levels make them potential n-type semiconductor candidates.
二萘并噻吩已被报道为一种有前景的p型半导体。高性能n型半导体的开发非常必要。将酰亚胺基团引入多环芳烃可以降低其最低未占分子轨道（LUMO）能级，以满足n型有机半导体材料的基本要求。在这项工作中，我们合成了四种酰亚胺修饰的二萘并噻吩和二萘并噻吩二氧化物。研究了它们的光电性质。它们较低的LUMO能级使它们成为潜在的n型半导体候选物。
