Koelmans Wabe W, Sebastian Abu, Jonnalagadda Vara Prasad, Krebs Daniel, Dellmann Laurent, Eleftheriou Evangelos
IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
Nat Commun. 2015 Sep 3;6:8181. doi: 10.1038/ncomms9181.
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.
纳米级存储设备的电阻取决于所施加电信号的历史，它可能成为新型计算范式（如受脑启发计算和忆阻器计算）中的关键构建模块。然而，仍有一些关键挑战需要克服，例如所需的高编程功率、噪声和电阻漂移。在此，为解决这些问题，我们提出了一种投影存储设备的概念，其显著特征是电阻存储的物理机制与信息检索过程解耦。我们基于相变存储机制设计并制造了投影存储设备，并通过详细实验令人信服地证明了这一概念，同时有广泛的建模和有限元模拟作为支撑。这些投影存储设备表现出极低的漂移和出色的噪声性能。我们还展示了对设备编程特性的主动控制和定制，能够可靠地实现多种电阻状态。
