通过单个极化原子来调节基于自组装单分子膜的结的隧穿率和介电响应。
Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom.
机构信息
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
出版信息
Adv Mater. 2015 Nov;27(42):6689-95. doi: 10.1002/adma.201502968. Epub 2015 Sep 28.
The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.
基于自组装单分子层（SAMs）的结的介电响应和电学性质可以通过改变 X 的极化率（这里 X = H、F、Cl、Br 或 I）来控制。发现随着 X 的极化率的增加，隧道速率增加了 1000 倍，介电常数（εr）增加了 4 倍。
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