Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
Adv Mater. 2015 Nov;27(42):6689-95. doi: 10.1002/adma.201502968. Epub 2015 Sep 28.
The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.
基于自组装单分子层（SAMs）的结的介电响应和电学性质可以通过改变 X 的极化率（这里 X = H、F、Cl、Br 或 I）来控制。发现随着 X 的极化率的增加，隧道速率增加了 1000 倍，介电常数（εr）增加了 4 倍。
