Yao Xudong, Liu Shangjing, Chang Yajing, Li Guopeng, Mi Longfei, Wang Xiaoming, Jiang Yang
School of Materials Science and Engineering, Hefei University of Technology , Hefei, Anhui 230009, P. R. China.
School of Engineering Technology, Purdue University , West Lafayette, Indiana 47907, United States.
ACS Appl Mater Interfaces. 2015 Oct 21;7(41):23117-23. doi: 10.1021/acsami.5b06857. Epub 2015 Oct 7.
Depleted heterojunction (DH) solar cells have shown great potential in power conversion. A 3-D DH structure was first designed and fabricated through a layer-by-layer spin-coating technique to increase the interfacial contact of p-type PbS quantum dots (QDs) and n-type CdS nanorod arrays. As a result, a decent power conversion efficiency of 4.78% in this structure was achieved, which is five times the efficiency of a planar heterojunction structure of a similar thickness. In the 3-D DH structure, n-type CdS nanorod arrays (NRs) were grown vertically as electron acceptors, on which p-type PbS quantum dots were deposited as absorbing materials in a layer-by-layer spin-coating fashion. The results are discussed in view of effective transportation of electrons through CdS NRs than the hopping transportation in large nanoparticle-based CdS film, the enlarged interfacial area, and shortened carrier diffusion distance.
耗尽型异质结（DH）太阳能电池在功率转换方面展现出了巨大潜力。首先通过逐层旋涂技术设计并制造了一种三维DH结构，以增加p型硫化铅量子点（QDs）与n型硫化镉纳米棒阵列的界面接触。结果，该结构实现了4.78%的可观功率转换效率，这是类似厚度的平面异质结结构效率的五倍。在三维DH结构中，n型硫化镉纳米棒阵列（NRs）作为电子受体垂直生长，p型硫化铅量子点以逐层旋涂的方式沉积在其上作为吸收材料。鉴于电子通过硫化镉纳米棒的有效传输比基于大纳米颗粒的硫化镉薄膜中的跳跃传输更有效、界面面积增大以及载流子扩散距离缩短，对这些结果进行了讨论。
