Li Huaping, Zhou Lili
Chemelectronics LLC , 440 Hindry Avenue, Unit E, Inglewood, California 90301, United States.
ACS Appl Mater Interfaces. 2015 Oct 21;7(41):22881-7. doi: 10.1021/acsami.5b05727. Epub 2015 Oct 6.
Single-walled carbon nanotube thin-film transistor (SWCNT TFT) and circuits were fabricated by fully inkjet printing gold nanoparticles as source/drain electrodes, semiconducting SWCNT thin films as channel materials, PS-PMMA-PS/EMIM TFSI composite gel as gate dielectrics, and PEDOT/PSS as gate electrodes. The ionic gel gated SWCNT TFT shows reversible conversion from p-type transistor behavior in air to ambipolar features under vacuum due to reversible oxygen doping in semiconducting SWCNT thin films. The threshold voltages of ionic gel gated SWCNT TFT and inverters are largely shifted to the low value (0.5 V for p-region and 1.0 V for n-region) by vacuum annealing at 140 °C to exhausively remove water that is incorporated in the ionic gel as floating gates. The vacuum annealed ionic gel gated SWCNT TFT shows linear temperature dependent transconductances and threshold voltages for both p- and n-regions. The strong temperature dependent transconductances (0.08 μS/K for p-region, 0.4 μS/K for n-region) indicate their potential application in thermal sensors. In the other hand, the weak temperature dependent threshold voltages (-1.5 mV/K for p-region, -1.1 mV/K for n-region) reflect their excellent thermal stability.
通过完全喷墨打印制备了单壁碳纳米管薄膜晶体管（SWCNT TFT）及其电路，其中使用金纳米颗粒作为源极/漏极电极，半导体单壁碳纳米管薄膜作为沟道材料，聚苯乙烯-聚甲基丙烯酸甲酯-聚苯乙烯/1-乙基-3-甲基咪唑双（三氟甲基磺酰）亚胺（PS-PMMA-PS/EMIM TFSI）复合凝胶作为栅极电介质，聚（3,4-乙撑二氧噻吩）/聚（苯乙烯磺酸盐）（PEDOT/PSS）作为栅极电极。离子凝胶栅控单壁碳纳米管薄膜晶体管由于半导体单壁碳纳米管薄膜中可逆的氧掺杂，表现出从空气中的p型晶体管行为到真空中的双极性特性的可逆转变。通过在140°C下进行真空退火以彻底去除作为浮栅掺入离子凝胶中的水，离子凝胶栅控单壁碳纳米管薄膜晶体管和反相器的阈值电压大幅向低值移动（p区为0.5 V，n区为1.0 V）。真空退火后的离子凝胶栅控单壁碳纳米管薄膜晶体管在p区和n区均表现出与温度呈线性相关的跨导和阈值电压。强烈的温度依赖性跨导（p区为0.08 μS/K，n区为0.4 μS/K）表明它们在热传感器中的潜在应用。另一方面，较弱的温度依赖性阈值电压（p区为-1.5 mV/K，n区为-1.1 mV/K）反映了它们出色的热稳定性。
