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具有高可逆容量的氮化钒纳米线负载SnS₂纳米片作为锂离子电池负极材料

Vanadium Nitride Nanowire Supported SnS2 Nanosheets with High Reversible Capacity as Anode Material for Lithium Ion Batteries.

作者信息

Balogun Muhammad-Sadeeq, Qiu Weitao, Jian Junhua, Huang Yongchao, Luo Yang, Yang Hao, Liang Chaolun, Lu Xihong, Tong Yexiang

机构信息

KLGHEI of Environment and Energy Chemistry, MOE of the Key Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Sun Yat-Sen University , Guangzhou 510275, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2015 Oct 21;7(41):23205-15. doi: 10.1021/acsami.5b07044. Epub 2015 Oct 12.

Abstract

The vulnerable restacking problem of tin disulfide (SnS2) usually leads to poor initial reversible capacity and poor cyclic stability, which hinders its practical application as lithium ion battery anode (LIB). In this work, we demonstrated an effective strategy to improve the first reversible capacity and lithium storage properties of SnS2 by growing SnS2 nanosheets on porous flexible vanadium nitride (VN) substrates. When evaluating lithium-storage properties, the three-dimensional (3D) porous VN coated SnS2 nanosheets (denoted as CC-VN@SnS2) yield a high reversible capacity of 75% with high specific capacity of about 819 mAh g(-1) at a current density of 0.65 A g(-1). Remarkable cyclic stability capacity of 791 mAh g(-1) after 100 cycles with excellent capacity retention of 97% was also achieved. Furthermore, discharge capacity as high as 349 mAh g(-1) is still retained after 70 cycles even at a elevated current density of 13 A g(-1). The excellent performance was due to the conductive flexible VN substrate support, which provides short Li-ion and electron pathways, accommodates large volume variation, contributes to the capacity, and provides mechanical stability, which allows the electrode to maintain its structural stability.

摘要

二硫化锡(SnS₂)的易发生的重新堆叠问题通常会导致初始可逆容量较差以及循环稳定性不佳,这阻碍了其作为锂离子电池负极(LIB)的实际应用。在这项工作中,我们展示了一种有效的策略,即通过在多孔柔性氮化钒(VN)基底上生长SnS₂纳米片来提高SnS₂的首次可逆容量和锂存储性能。在评估锂存储性能时,三维(3D)多孔VN包覆的SnS₂纳米片(表示为CC-VN@SnS₂)在电流密度为0.65 A g⁻¹时具有约819 mAh g⁻¹的高比容量,可逆容量高达75%。在100次循环后还实现了791 mAh g⁻¹的显著循环稳定容量,容量保持率高达97%。此外,即使在13 A g⁻¹的高电流密度下,70次循环后仍保留高达349 mAh g⁻¹的放电容量。优异的性能归因于导电柔性VN基底支撑,它提供了短的锂离子和电子传输路径,适应了大的体积变化,有助于提高容量,并提供了机械稳定性,使电极能够保持其结构稳定性。

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