Quan Jiang An, Jian Meng Xiang, Wei Zhang David, Hyuk Park Min, Yoo Sijung, Jin Kim Yu, Scott James F, Seong Hwang Cheol
State Key Laboratory of ASIC &System, School of Microelectronics, Fudan University, Shanghai 200433, China.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Sci Rep. 2015 Oct 6;5:14618. doi: 10.1038/srep14618.
The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.
铁电薄膜的介电常数通常比其体材料小几个数量级。在此，我们发现了一种方法，通过使脉冲开关场与本征开关时间（畴的成核加上从阴极到阳极的正向生长）同步，可将铁电薄膜的介电常数提高约500%。在平均晶粒尺寸为850 nm的170 nm锆钛酸铅薄膜中，这产生了介电常数为8200且最大核密度为3.8 μm⁻²的结果，这比其他介电薄膜高1至3个数量级。这使得存储器件中的电容器更小，是铁电畴工程纳米电子学发展中的一大进步。
