MoS2 /石墨烯异质结构的所有化学气相沉积合成和本征带隙观测。
All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures.
机构信息
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
出版信息
Adv Mater. 2015 Nov 25;27(44):7086-92. doi: 10.1002/adma.201503342. Epub 2015 Oct 7.
A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
设计了一种简便的全化学气相沉积方法，允许在同一生长过程中顺序生长 Gr 和单层 MoS2，从而可以在 Au 箔上直接构建 MoS2/Gr 垂直异质结构。通过扫描隧道显微镜和光谱表征，从 MoS2/Gr/Au 中获得了 MoS2 的弱 n 掺杂效应和本征能隙。通过结合光致发光测量，准确推断出激子结合能。
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