Nasiri-Majd Mojtaba, Taher Mohammad Ali, Fazelirad Hamid
Department of Chemistry, Shahid Bahonar University of Kerman, Kerman, Iran.
Department of Chemistry, Shahid Bahonar University of Kerman, Kerman, Iran.
Talanta. 2015 Nov 1;144:204-9. doi: 10.1016/j.talanta.2015.05.058. Epub 2015 May 28.
A simple and selective thallium imprinted polymer was synthesized as a chemical modifier for the stripping voltammetric determination of Tl ions. The polymerization process (bulk polymerization) was performed with ethylene glycol dimethacrylate (crosslinking monomer) and methacrylic acid (functional monomer) in the presence of 2,2'-azobis(isobutyronitrile) (initiator). The electrochemical method was based on the accumulation of thallium ions at the surface of a modified carbon paste electrode with Tl imprinted polymer and multi-walled carbon nanotubes. After preconcentration process, the voltammetric measurements were carried out via electrolysis of the accumulated Tl ions in a closed circuit. Under the optimized conditions, a linear response range from 3.0 to 240 ng mL(-1) was obtained. The detection limit and RSD (100.0 ng mL(-1) of Tl) were calculated as 0.76 ng mL(-1) and ±2.7%, respectively. The suggested modified electrode has good characteristics such as excellent selectivity, high sensitivity and suitable stability. Also, it was successfully applied for the electrochemical determination of trace amounts of Tl in the environmental and biological samples.
合成了一种简单且具有选择性的铊印迹聚合物，作为用于溶出伏安法测定铊离子的化学修饰剂。聚合过程（本体聚合）在乙二醇二甲基丙烯酸酯（交联单体）和甲基丙烯酸（功能单体）存在下，以2,2'-偶氮二异丁腈（引发剂）进行。电化学方法基于铊离子在含有铊印迹聚合物和多壁碳纳米管的修饰碳糊电极表面的富集。预富集过程后，通过在闭合电路中电解富集的铊离子进行伏安测量。在优化条件下，获得了3.0至240 ng mL⁻¹的线性响应范围。铊的检测限和相对标准偏差（100.0 ng mL⁻¹的铊）分别计算为0.76 ng mL⁻¹和±2.7%。所提出的修饰电极具有良好的特性，如优异的选择性、高灵敏度和适当的稳定性。此外，它已成功应用于环境和生物样品中痕量铊的电化学测定。
