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溶剂热法合成的锑掺杂Bi2Se3纳米片中的电子干涉输运及其电子-声子相互作用

Electronic interference transport and its electron-phonon interaction in the Sb-doped Bi2Se3 nanoplates synthesized by a solvothermal method.

作者信息

Zhao Bo, Chen Taishi, Pan Haiyang, Fei Fucong, Han Yuyan

机构信息

National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing 210093, People's Republic of China.

出版信息

J Phys Condens Matter. 2015 Nov 25;27(46):465302. doi: 10.1088/0953-8984/27/46/465302. Epub 2015 Nov 2.

DOI:10.1088/0953-8984/27/46/465302
PMID:26523916
Abstract

Here we synthesized the antimony doped [Formula: see text] nanoplates by the solvothermal method. The angle-dependent magnetoconductance study was carried out and all the [Formula: see text] were found to be normalized to the perpendicular field, indicating a clear 2D electronic state. The features of weak antilocalization and universal conductance fluctuations were clearly identified in the magnetoresistance transport of the 4-probe nanodevices. The dephasing lengths are extracted respectively according to the Hikami-Larkin-Nagaoka theory. It is attributed to the involvement of the dynamic spin centers. The dephasing lengths are found to increase with the decreasing temperature following a [Formula: see text] law with [Formula: see text]. This reveals the additional dephasing source of electron-phonon interaction, which is often absent for pure 2D electronic systems.

摘要

在这里,我们通过溶剂热法合成了锑掺杂的[化学式:见原文]纳米片。进行了角度相关的磁电导研究,发现所有的[化学式:见原文]都相对于垂直场进行了归一化,表明存在清晰的二维电子态。在四探针纳米器件的磁电阻输运中,明确识别出了弱反局域化和普遍电导涨落的特征。根据日高-拉金-长冈理论分别提取了退相干长度。这归因于动态自旋中心的参与。发现退相干长度随着温度降低而增加,遵循[公式:见原文]规律,其中[公式:见原文]。这揭示了电子-声子相互作用的额外退相干源,而这在纯二维电子系统中通常不存在。

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