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平面集成单晶钙钛矿光电探测器

Planar-integrated single-crystalline perovskite photodetectors.

作者信息

Saidaminov Makhsud I, Adinolfi Valerio, Comin Riccardo, Abdelhady Ahmed L, Peng Wei, Dursun Ibrahim, Yuan Mingjian, Hoogland Sjoerd, Sargent Edward H, Bakr Osman M

机构信息

Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Center, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G4.

出版信息

Nat Commun. 2015 Nov 9;6:8724. doi: 10.1038/ncomms9724.

DOI:10.1038/ncomms9724
PMID:26548941
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4667636/
Abstract

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 10(4) electrons per photon) and high gain-bandwidth product (above 10(8) Hz) relative to other perovskite-based optical sensors.

摘要

混合钙钛矿是用于光电子应用的有前途的半导体。然而,它们存在形态无序的问题,这限制了它们的光电子特性,最终也限制了器件性能。最近,钙钛矿单晶已被证明可以克服这个问题,并展现出令人印象深刻的改进:低陷阱密度、低本征载流子浓度、高迁移率以及优于钙钛矿基薄膜的长扩散长度。这些特性使该材料成为实现同时快速且灵敏的光探测的理想选择;不幸的是,这些宏观单晶无法在平面衬底上生长,这限制了它们在光电子集成方面的潜力。在这里,我们制备了由大尺寸钙钛矿单晶组成的大面积平面集成薄膜。这些晶体薄膜展现出与单晶相当的迁移率和扩散长度。使用这种技术,我们制造了一种高性能光探测器,相对于其他钙钛矿基光学传感器,它显示出高增益(每光子超过10⁴个电子)和高增益带宽积(超过10⁸Hz)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/bcab5615ca8f/ncomms9724-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/46ffd48a22c3/ncomms9724-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/caae3c849bbd/ncomms9724-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/a7fc5c956872/ncomms9724-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/bcab5615ca8f/ncomms9724-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/46ffd48a22c3/ncomms9724-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/caae3c849bbd/ncomms9724-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/a7fc5c956872/ncomms9724-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f640/4667636/bcab5615ca8f/ncomms9724-f4.jpg

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