Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.
Nat Nanotechnol. 2015 Dec;10(12):1013-26. doi: 10.1038/nnano.2015.247. Epub 2015 Nov 9.
The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.
高迁移率胶体半导体量子点(QD)固体的出现引发了一系列基础研究,这些研究描绘了载流子从跳跃输运到局域量子受限态,再到强耦合 QD 固体中离域和杂化态的能带输运的演变过程,类似于原子构成固体的方式。QD 固体中耦合的增强导致了 QD 器件性能的突破,如电子晶体管和电路、光电发光二极管、光伏器件和光电探测器以及热电器件。在这里,我们回顾了实现高迁移率 QD 固体的合成、组装、配体处理和掺杂方面的进展,以及描述 QD 固态能带输运的实验和理论。我们还介绍了最近的 QD 器件,并讨论了 QD 材料和器件设计的未来前景。