Guo Yujie, Van Bilzen Bart, Locquet Jean Pierre, Seo Jin Won
Department of Materials Engineering, KU Leuven, Leuven, Belgium.
Nanotechnology. 2015 Dec 11;26(49):495601. doi: 10.1088/0957-4484/26/49/495601. Epub 2015 Nov 16.
One-dimensional single crystalline InGaO3(ZnO)n (IGZO) nanostructures have great potential for various electrical and optical applications. This paper demonstrates for the first time, to our knowledge, a non-vacuum route for the synthesis of IGZO nanowires by annealing ZnO nanowires covered with solution-based IGZO precursor. This method results in nanowires with highly periodic IGZO superlattice structure. The phase transition of IGZO precursor during thermal treatment was systematically studied. Transmission electron microscopy studies reveal that the formation of the IGZO structure is driven by anisotropic inter-diffusion of In, Ga, and Zn atoms, and also by the crystallization of the IGZO precursor. Optical measurements using cathodoluminescence and UV-vis spectroscopy confirm that the nanowires consist of the IGZO compound with wide optical band gap and suppressed luminescence.
一维单晶铟镓锌氧化物（InGaO3(ZnO)n，IGZO）纳米结构在各种电气和光学应用中具有巨大潜力。据我们所知，本文首次展示了一种非真空方法，通过对覆盖有基于溶液的IGZO前驱体的氧化锌纳米线进行退火来合成IGZO纳米线。该方法可得到具有高度周期性IGZO超晶格结构的纳米线。系统研究了IGZO前驱体在热处理过程中的相变。透射电子显微镜研究表明，IGZO结构的形成是由铟、镓和锌原子的各向异性相互扩散以及IGZO前驱体的结晶驱动的。使用阴极发光和紫外可见光谱进行的光学测量证实，这些纳米线由具有宽光学带隙和抑制发光的IGZO化合物组成。
