Department of Materials Engineering, Korea Aerospace University , Goyang 412-791, Republic of Korea.
School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
Nano Lett. 2015 Dec 9;15(12):7913-20. doi: 10.1021/acs.nanolett.5b02946. Epub 2015 Nov 19.
Because of its excellent charge carrier mobility at the Dirac point, graphene possesses exceptional properties for high-performance devices. Of particular interest is the potential use of graphene nanoribbons or graphene nanomesh for field-effect transistors. Herein, highly aligned DNA nanowire arrays were crafted by flow-assisted self-assembly of a drop of DNA aqueous solution on a flat polymer substrate. Subsequently, they were exploited as "ink" and transfer-printed on chemical vapor deposited (CVD)-grown graphene substrate. The oriented DNA nanowires served as the lithographic resist for selective removal of graphene, forming highly aligned graphene nanoribbons. Intriguingly, these graphene nanoribbons can be readily produced over a large area (i.e., millimeter scale) with a high degree of feature-size controllability and a low level of defects, rendering the fabrication of flexible two terminal devices and field-effect transistors.
由于在狄拉克点处具有优异的电荷载流子迁移率，石墨烯在高性能器件中具有出色的性能。特别值得关注的是，石墨烯纳米带或石墨烯纳米网在场效应晶体管中的潜在应用。在此，通过在平坦聚合物基底上的一滴 DNA 水溶液的流辅助自组装，制备了高度取向的 DNA 纳米线阵列。随后，它们被用作“墨水”并转印到化学气相沉积 (CVD) 生长的石墨烯基底上。定向 DNA 纳米线可用作光刻胶，选择性地去除石墨烯，形成高度取向的石墨烯纳米带。有趣的是，这些石墨烯纳米带可以很容易地在大面积（即毫米级）上制备，具有高度的特征尺寸可控性和低缺陷水平，从而制造出灵活的两端器件和场效应晶体管。
