Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, Kasuga Park 6-1, Fukuoka, 816-8580, Japan.
Adv Mater. 2013 Dec 3;25(45):6562-8. doi: 10.1002/adma.201302619. Epub 2013 Sep 13.
Dense arrays of aligned graphene nanoribbons (GNRs) are fabricated by substrate-controlled etching of large-area single-layer graphene. An adequate choice of etching substrate and catalyst deposition method allows densities up to 25 nanoribbons μm(-1) to be obtained with average widths of 19 nm. The efficacy of the method is evidenced by the high on/off ratios of back-gated transistors made with these GNRs, which can go up to 5000.
通过大面积单层石墨烯的基底控制刻蚀，制备出了致密排列的取向石墨烯纳米带（GNRs）。选择合适的刻蚀基底和催化剂沉积方法，可以得到高达 25 条/μm 的纳米带密度，平均宽度为 19nm。通过使用这些 GNRs 制作的背栅晶体管，可以得到高达 5000 的高开关比，证明了该方法的有效性。
