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氧化物忆阻器件中的突触形变化。

Synaptic Metaplasticity Realized in Oxide Memristive Devices.

机构信息

Laboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China.

International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.

出版信息

Adv Mater. 2016 Jan 13;28(2):377-84. doi: 10.1002/adma.201503575. Epub 2015 Nov 17.

Abstract

Metaplasticity, a higher order of synaptic plasticity, as well as a key issue in neuroscience, is realized with artificial synapses based on a WO3 thin film, and the activity-dependent metaplastic responses of the artificial synapses, such as spike-timing-dependent plasticity, are systematically investigated. This work has significant implications in neuromorphic computation.

摘要

形质转换,一种更高阶的突触可塑性,也是神经科学的关键问题,是通过基于 WO3 薄膜的人工突触来实现的,并且系统地研究了人工突触的活动依赖性形质转换响应,如尖峰时间依赖可塑性。这项工作在神经形态计算中有重要意义。

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