Department of Electrical and Computer Engineering, University of Victoria , Victoria, British Columbia V8P 5C2, Canada.
Nano Lett. 2015 Dec 9;15(12):8306-10. doi: 10.1021/acs.nanolett.5b03922. Epub 2015 Nov 23.
We use plasmon enhancement to achieve terahertz (THz) photoconductive switches that combine the benefits of low-temperature grown GaAs with mature 1.5 μm femtosecond lasers operating below the bandgap. These below bandgap plasmon-enhanced photoconductive receivers and sources significantly outperform commercial devices based on InGaAs, both in terms of bandwidth and power, even though they operate well below saturation. This paves the way for high-performance low-cost portable systems to enable emerging THz applications in spectroscopy, security, medical imaging, and communication.
我们利用等离子体增强来实现太赫兹(THz)光导开关,将低温生长的 GaAs 的优势与成熟的 1.5μm 飞秒激光结合在一起,这些激光的工作波长低于带隙。这些低于带隙的等离子体增强光导接收器和光源在带宽和功率方面都明显优于基于 InGaAs 的商业器件,即使它们的工作状态远低于饱和状态。这为高性能、低成本的便携式系统铺平了道路,使新兴的太赫兹应用在光谱学、安全、医学成像和通信等领域成为可能。