Department of Chemistry and ‡Department of Chemical Engineering and Materials Science, §Chemical Theory Center, and Supercomputing Institute, University of Minnesota , Minneapolis, Minnesota 55455, United States.
J Am Chem Soc. 2015 Dec 23;137(50):15732-41. doi: 10.1021/jacs.5b07400. Epub 2015 Dec 10.
Self-assembled conjugated molecular wires containing thiophene up to 6 nm in length were grown layer-by-layer using click chemistry. Reflection-absorption infrared spectroscopy, ellipsometry and X-ray photoelectron spectroscopy were used to follow the stepwise growth. The electronic structure of the conjugated wires was studied with cyclic voltammetry and UV-vis spectroscopy as well as computationally with density functional theory (DFT). The current-voltage curves (±1 V) of the conjugated molecular wires were measured with conducting probe atomic force microscopy (CP-AFM) in which the molecular wire film bound to a gold substrate was contacted with a conductive AFM probe. By systematically measuring the low bias junction resistance as a function of length for molecules 1-4 nm long, we extracted the structure dependent tunneling attenuation factor (β) of 3.4 nm(-1) and a contact resistance of 220 kΩ. The crossover from tunneling to hopping transport was observed at a molecular length of 4-5 nm with an activation energy of 0.35 eV extracted from Arrhenius plots of resistance versus temperature. DFT calculations revealed localizations of spin densities (polarons) on molecular wire radical cations. The calculations were employed to gauge transition state energies for hopping of polarons along wire segments. Individual estimated transition state energies were 0.2-0.4 eV, in good agreement with the experimental activation energy. The transition states correspond to flattening of dihedral angles about specific imine bonds. These results open up possibilities to further explore the influence of molecular architecture on hopping transport in molecular junctions, and highlight the utility of DFT to understand charge localization and associated hopping-based transport.
使用点击化学,自组装的含有噻吩的共轭分子线长达 6nm,可以逐层生长。使用反射吸收红外光谱、椭圆偏振和 X 射线光电子能谱来跟踪逐步生长。使用循环伏安法、紫外可见光谱以及密度泛函理论(DFT)计算来研究共轭线的电子结构。使用导电探针原子力显微镜(CP-AFM)测量共轭分子线的电流-电压曲线(±1V),其中结合在金基底上的分子线薄膜与导电 AFM 探针接触。通过系统地测量长度为 1-4nm 的分子的低偏压结电阻作为长度的函数,我们提取出结构相关的隧穿衰减因子(β)为 3.4nm^(-1)和接触电阻为 220kΩ。在分子长度为 4-5nm 时,观察到从隧穿到跳跃输运的转变,从电阻与温度的 Arrhenius 图中提取出 0.35eV 的激活能。DFT 计算揭示了分子线自由基阳离子中自旋密度(极化子)的局域化。该计算用于衡量沿分子线段跳跃的极化子的过渡态能量。单个估计的过渡态能量为 0.2-0.4eV,与实验激活能吻合较好。过渡态对应于特定亚胺键的二面角的扁平化。这些结果为进一步探索分子结构对分子结中跳跃输运的影响提供了可能性,并突出了 DFT 用于理解电荷局域化和相关跳跃输运的实用性。