1T 相 MoS2 纳米片的忆阻行为和理想忆阻器。
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
机构信息
Department of Materials Science and Engineering, Michigan Technological University , Houghton, Michigan 49931-1295, United States.
Department of Materials Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109-2136, United States.
出版信息
Nano Lett. 2016 Jan 13;16(1):572-6. doi: 10.1021/acs.nanolett.5b04260. Epub 2015 Dec 17.
Memristor, which had been predicted a long time ago (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507), was recently invented (Strukov, D. B.; et al. Nature 2008, 453, 80). The introduction of a memristor is expected to open a new era for nonvolatile memory storage, neuromorphic computing, digital logic, and analog circuit. Furthermore, several breakthroughs were made for memristive phenomena and transistors with single-layer MoS2 (Sangwan, V. K.; et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M.; et al. Nat. Mater. 2013, 12, 554. Liu, H.; et al. ACS Nano 2014, 8, 1031. Bessonov, A. A.; et al. Nat. Mater. 2015, 14, 199. Yuan, J.; et al. Nat. Nanotechnol. 2015, 10, 389). Herein, we demonstrate that 2H phase of bulk MoS2 possessed an ohmic feature, whereas 1T phase of exfoliated MoS2 nanosheets exhibited a unique memristive behavior due to voltage-dependent resistance change. Furthermore, an ideal odd-symmetric memristor with odd-symmetric I-V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches antiserially.
忆阻器，它在很久以前就被预言了（蔡少棠，IEEE 电路理论汇刊 1971, 18, 507），最近才被发明（Strukov, D. B.; 等人，自然 2008, 453, 80）。忆阻器的引入有望为非易失性存储、神经形态计算、数字逻辑和模拟电路开启一个新时代。此外，单层 MoS2 中的忆阻现象和晶体管也取得了几项突破（Sangwan, V. K.; 等人，自然纳米技术 2015, 10, 403. van der Zande, A. M.; 等人，自然材料 2013, 12, 554. Liu, H.; 等人，ACS Nano 2014, 8, 1031. Bessonov, A. A.; 等人，自然材料 2015, 14, 199. Yuan, J.; 等人，自然纳米技术 2015, 10, 389）。在此，我们证明了体相 MoS2 的 2H 相具有欧姆特性，而剥离的 MoS2 纳米片的 1T 相由于电阻随电压变化而表现出独特的忆阻行为。此外，通过将两个不对称开关反串联，成功地由 1T 相 MoS2 纳米片制备出具有理想奇对称 I-V 特性的奇对称忆阻器。
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