Kim Tae Hee, Jang Eun Young, Lee Nyun Jong, Choi Deung Jang, Lee Kyung-Jin, Jang Jung-tak, Choi Jin-sil, Moon Seung Ho, Cheon Jinwoo
Department of Physics, Ewha Womans University, Seoul 120-750, Korea.
Nano Lett. 2009 Jun;9(6):2229-33. doi: 10.1021/nl900030n.
Recently a memristor ( Chua, L. O. IEEE Trans. Circuit Theory 1971 , 18 , 507 ), the fourth fundamental passive circuit element, has been demonstrated as thin film device operations ( Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. Nature (London) 2008 , 453 , 80 ; Yang, J. J.; Pickett. M. D.; Li, X.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Nat. Nanotechnol. 2008 , 3 , 429 ). A new addition to the memristor family can be nanoparticle assemblies consisting of an infinite number of monodispersed, crystalline magnetite (Fe(3)O(4)) particles. Assembly of nanoparticles that have sizes below 10 nm, exhibits at room temperature a voltage-current hysteresis with an abrupt and large bipolar resistance switching (R(OFF)/R(ON) approximately 20). Interestingly, observed behavior could be interpreted by adopting an extended memristor model that combines both a time-dependent resistance and a time-dependent capacitance. We also observed that such behavior is not restricted to magnetites; it is a general property of nanoparticle assemblies as it was consistently observed in different types of spinel structured nanoparticles with different sizes and compositions. Further investigation into this new nanoassembly system will be of importance to the realization of the next generation nanodevices with potential advantages of simpler and inexpensive device fabrications.
最近，作为第四种基本无源电路元件的忆阻器（蔡少棠，《IEEE电路理论汇刊》，1971年，第18卷，第507页）已被证明可用于薄膜器件操作（斯特鲁科夫，D. B.；斯奈德，G. S.；斯图尔特，D. R.；威廉姆斯，R. S.，《自然》（伦敦），2008年，第453卷，第80页；杨，J. J.；皮克特，M. D.；李，X.；奥尔伯格，D. A. A.；斯图尔特，D. R.；威廉姆斯，R. S.，《自然纳米技术》，2008年，第3卷，第429页）。忆阻器家族的一个新成员可以是由无限数量的单分散结晶磁铁矿（Fe(3)O(4)）颗粒组成的纳米颗粒组件。尺寸小于10 nm的纳米颗粒组件在室温下表现出电压-电流滞后现象，并具有突然且大的双极电阻切换（R(OFF)/R(ON)约为20）。有趣的是，观察到的行为可以通过采用一个扩展的忆阻器模型来解释，该模型结合了随时间变化的电阻和随时间变化的电容。我们还观察到这种行为并不局限于磁铁矿；它是纳米颗粒组件的一个普遍特性，因为在不同尺寸和组成的不同类型尖晶石结构纳米颗粒中都一致观察到了这种现象。对这个新的纳米组件系统的进一步研究对于实现具有更简单和廉价器件制造潜在优势的下一代纳米器件将具有重要意义。
