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Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

作者信息

Bashouti Muhammad Y, Yousefi Peyman, Ristein Jürgen, Christiansen Silke H

机构信息

Max-Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, Erlangen D-91058, Germany.

Universität Erlangen-Nürnberg , Department of Physics, Chair of Laser Physics, Staudtstr. 1, D-91058 Erlangen, Germany.

出版信息

J Phys Chem Lett. 2015 Oct 1;6(19):3988-93. doi: 10.1021/acs.jpclett.5b01918. Epub 2015 Sep 23.

DOI:10.1021/acs.jpclett.5b01918
PMID:26722904
Abstract

Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.

摘要

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