Zhang Xiao-Xiao, You Yumeng, Zhao Shu Yang Frank, Heinz Tony F
Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New York, New York 10027, USA.
Ordered Matter Science Research Center, Southeast University, Nanjing 211189, China.
Phys Rev Lett. 2015 Dec 18;115(25):257403. doi: 10.1103/PhysRevLett.115.257403. Epub 2015 Dec 15.
Transition metal dichalcogenides in the class MX_{2} (M=Mo, W; X=S, Se) have been identified as direct-gap semiconductors in the monolayer limit. Here, we examine light emission of monolayer WSe_{2} using temperature-dependent photoluminescence and time-resolved photoluminescence spectroscopy. We present experimental evidence for the existence of an optically forbidden dark state of the band-gap exciton that lies tens of meV below the optically bright state. The presence of the dark state is manifest in the strong quenching of light emission observed at reduced temperatures. The experimental findings are consistent with theoretical predictions of spin-polarized conduction and valence bands at the K point of the Brillouin zone, with the minimum gap occurring between bands of opposite electron spin.
MX₂(M = Mo、W;X = S、Se)类的过渡金属二硫属化物在单层极限下已被确定为直接带隙半导体。在此,我们使用温度依赖的光致发光和时间分辨光致发光光谱研究了单层WSe₂的发光情况。我们给出了实验证据,证明存在一种带隙激子的光学禁戒暗态,其能量比光学亮态低几十meV。暗态的存在表现为在低温下观察到的发光强烈猝灭。实验结果与布里渊区K点处自旋极化导带和价带的理论预测一致,最小带隙出现在相反电子自旋的能带之间。