Jung Sol, Yim Haein
J Nanosci Nanotechnol. 2015 Oct;15(10):8336-9. doi: 10.1166/jnn.2015.11250.
Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å], and [CoSiB 9 Å/Pd 14 Å], multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.
自旋转移矩（STT）诱导的磁化翻转，为磁性随机存取存储器（MRAM）带来了引人入胜的实际应用可能性。这种形式的存储器，称为STT-MRAM，是未来存储器应用的有力候选者。该应用通常需要大的垂直磁各向异性（PMA）、大矫顽力和低饱和磁化强度。因此，我们提出了一种非晶铁磁CoSiB合金，并研究了具有大PMA、大矫顽力和低饱和磁化强度的CoSiB/Pd多层薄膜。在本研究中，我们提出了一种卓越的层状结构，它可能是未来应用的候选者，并试图探讨一些可能影响CoSiB/Pd多层膜中PMA、矫顽力和饱和磁化强度变化的因素。我们研究了不同CoSiB层厚度的CoSiB/Pd多层膜的磁性能。在[CoSiB 7 Å/Pd 14 Å]和[CoSiB 9 Å/Pd 14 Å]多层膜中，矫顽力分别达到最大值228 Oe和最小值91 Oe。PMA在tCoSiB = 3 Å至tCoSiB = 9 Å时出现，在tCoSiB = 9 Å之后消失。
