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化学沉淀法制备硫化镉纳米颗粒的合成与表征

Synthesis and Characterization of Cadmium Sulfide Nanoparticles by Chemical Precipitation Method.

作者信息

Devi R Aruna, Latha M, Velumani S, Oza Goldie, Reyes-Figueroa P, Rohini M, Becerril-Juarez I G, Lee Jae-Hyeong, Yi Junsin

出版信息

J Nanosci Nanotechnol. 2015 Nov;15(11):8434-9. doi: 10.1166/jnn.2015.11472.

Abstract

Cadmium sulfide (CdS) nanoparticles were synthesized by chemical precipitation method using cadmium chloride (CdCl2), sodium sulfide (Na2S) and water as a solvent by varying temperatures from 20-80 degrees C. The nanoparticles were characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), High-resolution transmission electron microscopy (HR-TEM) and UV-Visible spectroscopy. XRD pattern revealed cubic crystal structure for all the synthesized CdS nanoparticles. Raman spectra showed first and second order longitudinal optical (LO) phonon vibrational modes of CdS. The size of CdS nanoparticles was found to be in the range of 15-80 nm by FE-SEM analysis, in all cases. The atomic percentage of cadmium and sulfur was confirmed to be 1:1 from EDS analysis. TEM micrograph depicts the spherical shape of the particles and the size is in the range of 15-85 nm while HR-TEM images of CdS nanoparticles exhibit well-resolved lattice fringes of the cubic structure of CdS. The optical properties of CdS were examined by UV-Visible spectroscopy which showed variation in absorption band from 460-480 nm. The band gap was calculated from the absorption edge and found to be in the range of 3.2-3.5 eV which is greater than the bulk CdS.

摘要

采用化学沉淀法,以氯化镉(CdCl₂)、硫化钠(Na₂S)和水为溶剂,在20至80摄氏度的不同温度下合成了硫化镉(CdS)纳米颗粒。通过X射线衍射(XRD)、拉曼光谱、场发射扫描电子显微镜(FE-SEM)、能量色散光谱(EDS)、高分辨率透射电子显微镜(HR-TEM)和紫外-可见光谱对纳米颗粒进行了表征。XRD图谱显示所有合成的CdS纳米颗粒均为立方晶体结构。拉曼光谱显示了CdS的一阶和二阶纵向光学(LO)声子振动模式。通过FE-SEM分析发现,在所有情况下,CdS纳米颗粒的尺寸范围为15至80纳米。EDS分析证实镉和硫的原子百分比为1:1。TEM显微照片描绘了颗粒的球形形状,尺寸在15至85纳米范围内,而CdS纳米颗粒的HR-TEM图像显示出CdS立方结构的晶格条纹清晰可辨。通过紫外-可见光谱对CdS的光学性质进行了研究,结果表明其吸收带在460至480纳米之间变化。从吸收边缘计算出带隙,发现其范围为3.2至3.5电子伏特,大于体相CdS的带隙。

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