可调谐的石墨烯-镓硒双异质结器件。
Tunable Graphene-GaSe Dual Heterojunction Device.
机构信息
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, E-08193, Bellaterra, Spain.
出版信息
Adv Mater. 2016 Mar 2;28(9):1845-52. doi: 10.1002/adma.201504514. Epub 2016 Jan 4.
A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
本文展示了一种基于双层石墨烯-碲化镓（GaSe）异质结的场效应器件。该器件使用单层石墨烯作为 GaSe 沟道上的电极，形成两个由局域顶栅控制的反向肖特基二极管。该器件表现出可调阈值电压的强整流特性。详细的理论模型用于解释器件的工作原理，并区分与单个二极管的差异。
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