Zhang Zhe, Li Jiahui, Xu Xiaopei, Shi Guodong
School of Physics and Advanced Energy, Henan University of Technology, Zhengzhou 450001, China.
Nanomaterials (Basel). 2025 Jul 30;15(15):1174. doi: 10.3390/nano15151174.
Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field. Here, we investigate the physical properties of the heterojunctions formed by the contact of different atom planes of Janus MoSSe (JMoSSe) and graphene (Gr), and regulate the Schottky barrier of the Gr/JMoSSe heterojunction by the number of layers and the electric field. Due to the difference in atomic electronegativity and surface work function (WF), the Gr/JSMoSe heterojunction formed by the contact of S atoms with Gr exhibits an n-type Schottky barrier, whereas the Gr/JSeMoS heterojunction formed by the contact of the Se atoms with Gr reveals a p-type Schottky barrier. Increasing the number of layers of JMoSSe allows the Gr/JMoSSe heterojunction to achieve the transition from Schottky contact to Ohmic contact. Moreover, under the control of an external electric field, the Gr/JMoSSe heterojunction can realize the transition among n-type Schottky barrier, p-type Schottky barrier, and Ohmic contact. The physical mechanism of the layer number and electric field modulation effect is analyzed in detail by the change in the interface electron charge transfer. Our results will contribute to the design and application of nanoelectronics and optoelectronic devices based on Gr/JMoSSe heterojunctions in the future.
构建异质结可以结合不同二维（2D）材料的优异性能并消除单一材料的缺点，而调控异质结可以增强其性能并扩展应用领域。在此，我们研究了由Janus MoSSe（JMoSSe）和石墨烯（Gr）的不同原子平面接触形成的异质结的物理性质，并通过层数和电场来调控Gr/JMoSSe异质结的肖特基势垒。由于原子电负性和表面功函数（WF）的差异，S原子与Gr接触形成的Gr/JSMoSe异质结表现出n型肖特基势垒，而Se原子与Gr接触形成的Gr/JSeMoS异质结则呈现出p型肖特基势垒。增加JMoSSe的层数可使Gr/JMoSSe异质结实现从肖特基接触到欧姆接触的转变。此外，在外部电场的控制下，Gr/JMoSSe异质结可以实现n型肖特基势垒、p型肖特基势垒和欧姆接触之间的转变。通过界面电子电荷转移的变化详细分析了层数和电场调制效应的物理机制。我们的结果将有助于未来基于Gr/JMoSSe异质结的纳米电子器件和光电器件的设计与应用。
