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用于硫蒸气传感应用的二维硒化铟

Two-Dimensional Indium Selenide for Sulphur Vapour Sensing Applications.

作者信息

Andres-Penares Daniel, Canet-Albiach Rodolfo, Noguera-Gomez Jaume, Martínez-Pastor Juan P, Abargues Rafael, Sánchez-Royo Juan F

机构信息

ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain.

MATINÉE: CSIC Associated Unit-(ICMM-ICMUV of the University of Valencia), Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain.

出版信息

Nanomaterials (Basel). 2020 Jul 18;10(7):1396. doi: 10.3390/nano10071396.

DOI:10.3390/nano10071396
PMID:32708372
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7408355/
Abstract

Surface-to-volume ratio in two-dimensional (2D) materials highlights among their characteristics as an inherent and intrinsic advantage taking into account their strong sensitivity to surface effects. For this reason, we have proposed in this work micromechanically exfoliated 2D nanosheets of InSe as an optical vapour sensor. As a proof of concept, we used 2-mercaptoethanol as the chemical analyte in vapour phase to monitor the change of the InSe photoluminescence (PL) before and after exposure to the analyte. For short vapour exposure times (at low analyte concentration), we found a PL enhancement of InSe nanosheets attributed to the surface localization of Se defects. For long vapour exposure times (or higher concentrations) a PL reduction is observed, probably due to the diffusion of molecules within the nanosheet. These results confirm the capability of 2D InSe as a photoluminescent sensor of vapours, because of its sensitivity to surface passivation or volume diffusion of molecules.

摘要

二维(2D)材料的表面积与体积之比是其固有且内在的优势之一,这是由于它们对表面效应具有很强的敏感性。因此,在这项工作中,我们提出将微机械剥离的InSe二维纳米片用作光学蒸汽传感器。作为概念验证,我们使用2-巯基乙醇作为气相中的化学分析物,以监测InSe光致发光(PL)在暴露于分析物前后的变化。对于短时间的蒸汽暴露(在低分析物浓度下),我们发现InSe纳米片的PL增强,这归因于Se缺陷的表面定位。对于长时间的蒸汽暴露(或更高浓度),观察到PL降低,这可能是由于分子在纳米片内的扩散。这些结果证实了二维InSe作为蒸汽光致发光传感器的能力,因为它对分子的表面钝化或体积扩散敏感。

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本文引用的文献

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Gas Sensing Properties of Perovskite Decorated Graphene at Room Temperature.室温下钙钛矿修饰石墨烯的气体传感性能。
Sensors (Basel). 2019 Oct 20;19(20):4563. doi: 10.3390/s19204563.
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High-Mobility InSe Transistors: The Nature of Charge Transport.高性能 InSe 晶体管:电荷输运的本质。
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Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide.二维硒化铟中发光激子的面外取向
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