Timofeeva Maria, Bolshakov Alexey, Tovee Peter D, Zeze Dagou A, Dubrovskii Vladimir G, Kolosov Oleg V
Laboratory of Physics of Nanostructures, Nanotechnology Centre, Saint-Petersburg Physics and Technology Centre for Research and Education of Russian Academy of Sciences, 8, bld. 3 Khlopina, St. Petersburg 194021, Russia; Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO), Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
Laboratory of Physics of Nanostructures, Nanotechnology Centre, Saint-Petersburg Physics and Technology Centre for Research and Education of Russian Academy of Sciences, 8, bld. 3 Khlopina, St. Petersburg 194021, Russia.
Ultramicroscopy. 2016 Mar;162:42-51. doi: 10.1016/j.ultramic.2015.12.006. Epub 2015 Dec 20.
Scanning thermal microscopy (SThM), which enables measurement of thermal transport and temperature distribution in devices and materials with nanoscale resolution is rapidly becoming a key approach in resolving heat dissipation problems in modern processors and assisting development of new thermoelectric materials. In SThM, the self-heating thermal sensor contacts the sample allowing studying of the temperature distribution and heat transport in nanoscaled materials and devices. The main factors that limit the resolution and sensitivities of SThM measurements are the low efficiency of thermal coupling and the lateral dimensions of the probed area of the surface studied. The thermal conductivity of the sample plays a key role in the sensitivity of SThM measurements. During the SThM measurements of the areas with higher thermal conductivity the heat flux via SThM probe is increased compared to the areas with lower thermal conductivity. For optimal SThM measurements of interfaces between low and high thermal conductivity materials, well defined nanoscale probes with high thermal conductivity at the probe apex are required to achieve a higher quality of the probe-sample thermal contact while preserving the lateral resolution of the system. In this paper, we consider a SThM approach that can help address these complex problems by using high thermal conductivity nanowires (NW) attached to a tip apex. We propose analytical models of such NW-SThM probes and analyse the influence of the contact resistance between the SThM probe and the sample studied. The latter becomes particularly important when both tip and sample surface have high thermal conductivities. These models were complemented by finite element analysis simulations and experimental tests using prototype probe where a multiwall carbon nanotube (MWCNT) is exploited as an excellent example of a high thermal conductivity NW. These results elucidate critical relationships between the performance of the SThM probe on one hand and thermal conductivity, geometry of the probe and its components on the other. As such, they provide a pathway for optimizing current SThM for nanothermal studies of high thermal conductivity materials. Comparison between experimental and modeling results allows us to provide direct estimates of the contact thermal resistances for various interfaces such as MWCNT-Al (5×10(-9)±1×10(-9)Km(2)W(-1)), Si3N4-Al (6×10(-8)±2.5×10(-8)Km(2)W(-1)) and Si3N4-graphene (~10(-8)Km(2)W(-1)). It was also demonstrated that the contact between the MWCNT probe and Al is relatively perfect, with a minimal contact resistance. In contrast, the thermal resistance between a standard Si3N4 SThM probe and Al is an order of magnitude higher than reported in the literature, suggesting that the contact between these materials may have a multi-asperity nature that can significantly degrade the contact resistance.
扫描热显微镜(SThM)能够以纳米级分辨率测量器件和材料中的热传输和温度分布,正迅速成为解决现代处理器散热问题以及辅助新型热电材料开发的关键方法。在扫描热显微镜中,自热式热传感器与样品接触,从而能够研究纳米级材料和器件中的温度分布和热传输。限制扫描热显微镜测量分辨率和灵敏度的主要因素是热耦合效率低以及所研究表面探测区域的横向尺寸。样品的热导率在扫描热显微镜测量的灵敏度中起着关键作用。在对具有较高热导率的区域进行扫描热显微镜测量时,与具有较低热导率的区域相比,通过扫描热显微镜探针的热通量会增加。为了对低热导率和高热导率材料之间的界面进行最佳的扫描热显微镜测量,需要在探针顶端具有高导热率的明确纳米级探针,以在保持系统横向分辨率的同时实现更高质量的探针 - 样品热接触。在本文中,我们考虑一种扫描热显微镜方法,该方法可以通过使用附着在探针顶端的高导热率纳米线(NW)来帮助解决这些复杂问题。我们提出了这种纳米线 - 扫描热显微镜探针的分析模型,并分析了扫描热显微镜探针与所研究样品之间的接触电阻的影响。当探针和样品表面都具有高导热率时,后者变得尤为重要。这些模型通过有限元分析模拟和使用原型探针的实验测试得到补充,在实验测试中,多壁碳纳米管(MWCNT)被用作高导热率纳米线的一个优秀示例。这些结果阐明了一方面扫描热显微镜探针的性能与另一方面热导率、探针及其组件的几何形状之间的关键关系。因此,它们为优化当前用于高导热率材料纳米热研究的扫描热显微镜提供了一条途径。实验结果与建模结果之间的比较使我们能够直接估计各种界面的接触热阻,例如多壁碳纳米管 - 铝(5×10^(-9)±1×10^(-9)K·m²·W^(-1))、氮化硅 - 铝(6×10^(-8)±2.5×10^(-8)K·m²·W^(-1))和氮化硅 - 石墨烯(~10^(-8)K·m²·W^(-1))。还证明了多壁碳纳米管探针与铝之间的接触相对完美,接触电阻最小。相比之下标准的氮化硅扫描热显微镜探针与铝之间的热阻比文献报道的高一个数量级,这表明这些材料之间的接触可能具有多粗糙性质,会显著降低接触电阻。