Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
Ultramicroscopy. 2013 Oct;133:80-7. doi: 10.1016/j.ultramic.2013.06.020. Epub 2013 Jul 5.
Scanning thermal microscopy (SThM) is a very promising technique for local investigation of temperature and thermal properties of nanostructures with great application potential in contemporary nanoelectronics and nanotechnology. In order to increase the localization of SThM measurements, the size of probes has recently substantially decreased, which results in novel types of SThM probes manufactured with the use of modern silicon microfabrication technology. Quantitative SThM measurements with these probes need methods, which enable to assess the quality of thermal contact between the probe and the investigated surface. In this paper we propose a tip thermal mapping (TThM) procedure, which is used to estimate experimentally the distribution of power dissipated by the tip of an SThM probe. We also show that the proposed power dissipation model explains the results of active-mode SThM measurements and that the TThM procedure is reversible for a given probe and sample.
扫描热显微镜(SThM)是一种非常有前途的技术,可用于局部研究纳米结构的温度和热特性,在当代微电子学和纳米技术中有很大的应用潜力。为了提高 SThM 测量的定位性,探针的尺寸最近已经大大减小,这导致了使用现代硅微制造技术制造的新型 SThM 探针。使用这些探针进行定量 SThM 测量需要能够评估探针与被测表面之间热接触质量的方法。在本文中,我们提出了一种尖端热映射(TThM)程序,用于实验估计 SThM 探针尖端耗散功率的分布。我们还表明,所提出的功率耗散模型解释了主动模式 SThM 测量的结果,并且对于给定的探针和样品,TThM 程序是可逆的。