Department of Physics and Astronomy, University of Delaware , Newark, Delaware 19716, United States.
Nano Lett. 2016 Feb 10;16(2):1069-75. doi: 10.1021/acs.nanolett.5b04205. Epub 2016 Jan 11.
Nanomagnetic implementations of Boolean logic have attracted attention because of their nonvolatility and the potential for unprecedented overall energy-efficiency. Unfortunately, the large dissipative losses that occur when nanomagnets are switched with a magnetic field or spin-transfer-torque severely compromise the energy-efficiency. Recently, there have been experimental reports of utilizing the Spin Hall effect for switching magnets, and theoretical proposals for strain induced switching of single-domain magnetostrictive nanomagnets, that might reduce the dissipative losses significantly. Here, we experimentally demonstrate, for the first time that strain-induced switching of single-domain magnetostrictive nanomagnets of lateral dimensions ∼200 nm fabricated on a piezoelectric substrate can implement a nanomagnetic Boolean NOT gate and steer bit information unidirectionally in dipole-coupled nanomagnet chains. On the basis of the experimental results with bulk PMN-PT substrates, we estimate that the energy dissipation for logic operations in a reasonably scaled system using thin films will be a mere ∼1 aJ/bit.
纳米磁性布尔逻辑的实现因其非易失性和潜在的前所未有的整体能效而引起了关注。不幸的是，当纳米磁体通过磁场或自旋转移扭矩切换时，会发生大的耗散损失，这严重影响了能效。最近，已经有实验报道利用自旋霍尔效应来切换磁铁，以及理论上提出利用应变诱导单畴磁致伸缩纳米磁铁的切换，这可能会显著降低耗散损失。在这里，我们首次实验证明，在压电衬底上制造的横向尺寸约为 200nm 的单畴磁致伸缩纳米磁铁的应变诱导切换可以实现纳米磁布尔非门，并在偶极耦合纳米磁铁链中单向引导位信息。基于具有体 PMN-PT 衬底的实验结果，我们估计，在使用薄膜的合理缩放系统中，逻辑操作的能量消耗仅为约 1aJ/bit。
