Li Xin, Singh Hanuman, Bao Yi, Luo Qiang, Li Shihao, Chatterjee Jyotirmoy, Goiriena-Goikoetxea Maite, Xiao Zhuyun, Tamura Nobumichi, Candler Rob N, You Long, Bokor Jeff, Hong Jeongmin
School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.
School of Sciences, Hubei University of Technology, Wuhan 430068, China.
Nano Lett. 2023 Aug 9;23(15):6845-6851. doi: 10.1021/acs.nanolett.3c00707. Epub 2023 Jul 19.
Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications.
基于磁畴壁（DW）的逻辑器件为新兴电子应用提供了众多机会，使其能够具备诸如快速运动、高密度和非易失性等卓越性能特征来处理信息。然而，这些器件依赖外部磁场，这限制了它们的应用；在大规模应用中这一问题尤为突出。由压电衬底与铁磁体耦合而成的多铁性系统提供了一种潜在解决方案，即通过磁弹耦合利用电场控制磁化。应变诱导的磁化各向异性倾斜能够以可控方式影响畴壁运动。我们展示了一种使用此类系统执行全电逻辑操作的方法。电场控制应变所诱导的相邻磁畴之间的铁磁耦合已被用于促进非共线自旋排列，该排列在布尔逻辑的所有实现方式中用于实现包括畴壁产生、传播和钉扎在内的基本构建模块，这将为可扩展的逻辑集成内存应用铺平道路。
