磁电混合结构中的电场辅助非易失性磁开关

Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure.

作者信息

Yang Yuanjun, Luo Zhenlin, Wang Shutong, Huang Wenyu, Wang Guilin, Wang Cangmin, Yao Yingxue, Li Hongju, Wang Zhili, Zhou Jingtian, Dong Yongqi, Guan Yong, Tian Yangchao, Feng Ce, Zhao Yonggang, Gao Chen, Xiao Gang

机构信息

Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

出版信息

iScience. 2021 Jun 17;24(7):102734. doi: 10.1016/j.isci.2021.102734. eCollection 2021 Jul 23.

DOI:10.1016/j.isci.2021.102734

PMID:34258562

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8258860/

Abstract

Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.

摘要

电场（E 场）对磁开关的控制提供了一种节能方式，可用于切换自旋电子器件中的磁状态。磁性隧道结（MTJ）/PMN-PT 磁电混合体的角隧道磁电阻（TMR）表明，施加 E 场时，自由层的角度相关开关场可显著降低。特别是，随着 E 场从 0 增加到 6 kV/cm，沿主轴的开关场从 28.0 Oe 降低了 59%至 11.5 Oe，而 TMR 比率保持不变。对于平行（反平行）到反平行（平行）状态切换，开关边界角减小（增大），导致开关窗口尺寸缩小。通过使用低至 11.5 Oe 的较小磁场偏置的 E 场，展示了非易失性和可逆的 180°磁化切换。角磁开关源于 E 场诱导的磁弹性各向异性、磁形状各向异性和塞曼能之间的竞争，这一点通过微磁模拟得到了证实。