Lin Siqi, Li Wen, Chen Zhiwei, Shen Jiawen, Ge Binghui, Pei Yanzhong
Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China.
Beijing national laboratory for condensed matter physics, Institute of physics, Chinese academy of science, Beijing 100190, China.
Nat Commun. 2016 Jan 11;7:10287. doi: 10.1038/ncomms10287.
High-efficiency thermoelectric materials require a high conductivity. It is known that a large number of degenerate band valleys offers many conducting channels for improving the conductivity without detrimental effects on the other properties explicitly, and therefore, increases thermoelectric performance. In addition to the strategy of converging different bands, many semiconductors provide an inherent band nestification, equally enabling a large number of effective band valley degeneracy. Here we show as an example that a simple elemental semiconductor, tellurium, exhibits a high thermoelectric figure of merit of unity, not only demonstrating the concept but also filling up the high performance gap from 300 to 700 K for elemental thermoelectrics. The concept used here should be applicable in general for thermoelectrics with similar band features.
高效热电材料需要高电导率。众所周知,大量简并能带谷提供了许多导电通道,可在不对其他性能产生明显不利影响的情况下提高电导率,从而提高热电性能。除了汇聚不同能带的策略外,许多半导体还具有固有的能带嵌套现象,同样能实现大量有效的能带谷简并。在此,我们以简单的元素半导体碲为例表明,它展现出高达1的热电优值,不仅证明了这一概念,还填补了元素热电材料在300至700 K之间的高性能差距。这里所采用的概念通常应适用于具有类似能带特征的热电材料。