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通过大规模卷对卷微凹版印刷和刮刀法制备的大面积钙钛矿纳米线阵列。

Large-area perovskite nanowire arrays fabricated by large-scale roll-to-roll micro-gravure printing and doctor blading.

作者信息

Hu Qiao, Wu Han, Sun Jia, Yan Donghang, Gao Yongli, Yang Junliang

机构信息

Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China.

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China.

出版信息

Nanoscale. 2016 Mar 7;8(9):5350-7. doi: 10.1039/c5nr08277c.

Abstract

Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ∼45%, temperature ∼28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays with great potential applications in flexible electronic and optoelectronic devices.

摘要

有机-无机杂化卤化物钙钛矿纳米线(PNWs)在太阳能电池、场效应晶体管和光电探测器等电子和光电器件中显示出巨大的潜在应用价值。制造有序的大面积PNW阵列,并极大地加速它们在电子和光电器件中的应用和商业化,具有非常重要的意义。在此,通过大规模卷对卷(R2R)微凹版印刷和刮刀法,在环境条件(湿度约45%,温度约28°C)下制备了高度取向且超长的甲基碘化铅(CH3NH3PbI3)PNW阵列薄膜,所制备的PNW长度可达15毫米。此外,基于这些PNW的光电探测器已成功制备在氧化硅(SiO2)和柔性聚对苯二甲酸乙二醇酯(PET)衬底上,并表现出适中的性能。本研究提供了低成本、大规模的技术来制造大面积PNW阵列,在柔性电子和光电器件中具有巨大的潜在应用价值。

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