在塑料基板上制备的自供电p-NiO/n-ZnO异质结紫外光电探测器。
Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates.
作者信息
Hasan Md Rezaul, Xie Ting, Barron Sara C, Liu Guannan, Nguyen Nhan V, Motayed Abhishek, Rao Mulpuri V, Debnath Ratan
机构信息
Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, VA 22030, USA.
Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA.
出版信息
APL Mater. 2015 Oct;3(10). doi: 10.1063/1.4932194. Epub 2015 Oct 1.
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.
采用低温溅射技术，在涂覆有铟掺杂氧化锡（ITO）的聚对苯二甲酸乙二酯（PET）塑料基板上制备了一种基于p型NiO和n型ZnO的自供电紫外（UV）光电探测器（PD）。该异质结在1.2 V的反向偏压下，在紫外光照射下表现出非常快速的时间光响应，量子效率超过63%。经过设计的超薄Ti/Au顶部金属接触层和紫外透明的PET/ITO基板，使得光电探测器能够从正面或背面进行光照。同时，还研究了溅射NiO和ZnO薄膜的形貌、结构、化学和光学性质。
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