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单层和双层WS2中强大的室温谷极化

Robust room temperature valley polarization in monolayer and bilayer WS2.

作者信息

Nayak Pramoda K, Lin Fan-Cheng, Yeh Chao-Hui, Huang Jer-Shing, Chiu Po-Wen

机构信息

Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

出版信息

Nanoscale. 2016 Mar 21;8(11):6035-42. doi: 10.1039/c5nr08395h. Epub 2016 Mar 1.

Abstract

We report robust room temperature valley polarization in chemical-vapor-deposition (CVD) grown monolayer and bilayer WS2via polarization-resolved photoluminescence measurements using excitation below the bandgap. We show that excitation with energy slightly below the bandgap of the multi-valleyed transition metal chalcogenides can effectively suppress the random redistribution of excited electrons and, thereby, greatly enhance the efficiency of valley polarization at room temperature. Compared to mechanically exfoliated WS2, our CVD grown WS2 films also show enhancement in the coupling of spin, layer and valley degree of freedom and, therefore, provide improved valley polarization. At room temperature, using below-bandgap excitation and CVD grown monolayer and bilayer WS2, we have reached a record-high valley polarization of 35% and 80%, respectively, exceeding the previously reported values of 10% and 65% for mechanically exfoliated WS2 layers using resonant excitation. This observation provides a new direction to enhance valley control at room temperature.

摘要

我们通过使用带隙以下激发的偏振分辨光致发光测量,报道了化学气相沉积(CVD)生长的单层和双层WS2中稳健的室温谷极化。我们表明,用略低于多谷过渡金属硫族化物带隙的能量进行激发,可以有效抑制激发电子的随机重新分布,从而大大提高室温下谷极化的效率。与机械剥离的WS2相比,我们的CVD生长的WS2薄膜在自旋、层和谷自由度的耦合方面也表现出增强,因此提供了改善的谷极化。在室温下,使用带隙以下激发以及CVD生长的单层和双层WS2,我们分别达到了创纪录的35%和80%的高谷极化,超过了之前报道的使用共振激发的机械剥离WS2层的10%和65%的值。这一观察结果为在室温下增强谷控制提供了一个新方向。

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