Mol P Riya, Barman Prahalad Kanti, Sarma Prasad V, Kumar Abhishek S, Sahu Satyam, Shaijumon Manikoth M, Kini Rajeev N
Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM) Maruthamala P. O. Vithura Kerala 695551 India
Nanoscale Adv. 2021 Aug 17;3(19):5676-5682. doi: 10.1039/d1na00462j. eCollection 2021 Sep 28.
We report circularly polarised emission, with helicity opposite to the optical excitation, from a van der Waals heterostructure (HS) consisting of a monolayer MoS and three-layer WS. Selective excitation of the MoS layer confirms that this cross-polarized emission is due to the charge transfer from the WS layers to the MoS layer. We propose that the high levels of n-doping in the constituent layers due to sulphur vacancies and defects give rise to an enhanced transition rate of electrons from the valley of WS to the ' valley of MoS, which leads to the emission, counter polarized to the excitation. Simulations based on the rate equation model support this conclusion.
我们报道了一种由单层MoS和三层WS组成的范德华异质结构(HS)发出的圆偏振光,其螺旋性与光激发相反。对MoS层的选择性激发证实,这种交叉偏振发射是由于电荷从WS层转移到MoS层所致。我们认为,由于硫空位和缺陷导致的组成层中的高n型掺杂,使得电子从WS的谷到MoS的谷的跃迁速率增强,从而导致了与激发相反偏振的发射。基于速率方程模型的模拟支持了这一结论。