采用微接触印刷且具有与电场无关发射特性的顶部发射量子点发光器件。

Top-emitting quantum dots light-emitting devices employing microcontact printing with electricfield-independent emission.

作者信息

Liu Shihao, Liu Wenbo, Ji Wenyu, Yu Jing, Zhang Wei, Zhang Letian, Xie Wenfa

机构信息

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, People's Republic of China.

Department of Physics, Jilin University, Changchun, 130012, People's Republic of China.

出版信息

Sci Rep. 2016 Mar 2;6:22530. doi: 10.1038/srep22530.

DOI:10.1038/srep22530

PMID:26932521

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4773764/

Abstract

Recent breakthroughs in quantum dot light-emitting devices (QD-LEDs) show their promise in the development of next-generation displays. However, the QD-LED with conventional ITO-based bottom emission structure is difficult to realize the high aperture ratio, electricfield-independent emission and flexible full-color displays. Hence, we demonstrate top-emitting QD-LEDs with dry microcontact printing quantum dot films. The top-emitting structure is proved to be able to accelerate the excitons radiative transition rate, then contributing to stable electroluminescent efficiency with a very low roll-off, and preventing spectra from shifting and broadening with the electric field increases. The results suggest potential routes towards creating high aperture ratio, wide color gamut, color-stable and flexible QD-LED displays.

摘要

量子点发光器件（QD-LED）的最新突破显示出其在下一代显示器开发中的潜力。然而，具有传统基于ITO的底部发射结构的QD-LED难以实现高开口率、与电场无关的发射以及柔性全彩显示。因此，我们展示了采用干式微接触印刷量子点薄膜的顶部发射QD-LED。顶部发射结构被证明能够加速激子的辐射跃迁速率，从而有助于实现具有非常低滚降的稳定电致发光效率，并防止光谱随着电场增加而发生偏移和展宽。这些结果为制造高开口率、广色域、颜色稳定且柔性的QD-LED显示器提供了潜在途径。