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基于顶部发射的ZnSeTe/ZnSe/ZnS的具有增强色度效率的蓝色量子点发光二极管。

Top-Emission ZnSeTe/ZnSe/ZnS-Based Blue Quantum Dot Light-Emitting Diodes with Enhanced Chroma Efficiency.

作者信息

Feng Jingwen, Jiang Maocheng, Li Dong, Zhang Yuanming, Pei Chen, Zhou Li, Chen Zhuo, Li Yanzhao, Li Xinguo, Xu Xiaoguang

机构信息

BOE Technology Group Co., Ltd., Beijing 100176, P. R. China.

出版信息

J Phys Chem Lett. 2023 Mar 16;14(10):2526-2532. doi: 10.1021/acs.jpclett.3c00307. Epub 2023 Mar 6.

Abstract

A high-performance quantum dot light-emitting diode (QLED) with heavy metal free (HMF) quantum dots (QDs) is urgently needed for its application in next-generation eco-friendly displays. However, the preparation of high-performance HMF QD materials and the corresponding electroluminescent devices remain challenges at present, especially for blue-emitting devices. In this work, by adjusting the Te/Se ratio of the ZnSeTe core, ZnSeTe/ZnSe/ZnS blue QDs with adjustable energy levels and emission peaks are demonstrated. These QDs are utilized to fabricate top-emitting QLEDs, yielding a peak current efficiency (CE) of 11.8 cd A. To make it one step further to meet the requirement of the wide color gamut in displays, the devices' color coordinates and current efficiency are simultaneously optimized by adjusting their microcavity structure and electrical properties. Finally, the chroma efficiency (current efficiency/CIEy) of the blue devices is optimized to 72, which is 2.2 times that of the control device.

摘要

下一代环保型显示器的应用迫切需要一种采用无重金属(HMF)量子点(QD)的高性能量子点发光二极管(QLED)。然而,目前制备高性能HMF量子点材料及相应的电致发光器件仍然面临挑战,尤其是对于蓝光发射器件而言。在这项工作中,通过调整ZnSeTe核的Te/Se比例,展示了能级和发射峰可调的ZnSeTe/ZnSe/ZnS蓝色量子点。这些量子点被用于制造顶部发射QLED,峰值电流效率(CE)达到11.8 cd/A。为了进一步满足显示器广色域的要求,通过调整微腔结构和电学性质,同时优化了器件的色坐标和电流效率。最终,蓝色器件的色度效率(电流效率/CIEy)优化至72,是对照器件的2.2倍。

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